VAPOR GROWTH METHOD AND VAPOR GROWTH DEVICE FOR APPLYING THE SAME

• Main Authors: ARAMAKI SATOSHI, KANEDA WATARU
• Format: Patent
• Language: English
• Published: 06.07.1999
• Edition: 6
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide the method which enables easy control of the temp. profile in the reaction furnace and adjustment of the vapor growth temp. of the thin film on the substrate, in a reaction furnace for performing vapor growth of a thin film on a substrate and also to provide the device for applying the method. SOLUTION: This vapor growth method using the vapor growth device (vertical face-up multiple substrate processing MOCVD(metal-organic chemical vapor deposition) device R) comprises: placing plural substrates (GaAs substrates 3) on a susceptor (carbon susceptor 2) disposed in a reaction furnace 1 for performing vapor growth of thin films; and supplying a gaseous raw material to the surface of each of the substrates 3 to form a thin film on each of the substrates 3. In the device, concentric-circularly divided cooling flow passages (water cooling jackets C1 to C6) are formed and also, a cooling controller for controlling at least any one of the flow rate and temp. of a cooling medium passing through each of the cooling flow passages C1 to C6 to appropriately adjust the temp. profile in the reaction furnace 1, is placed.