SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device in which the chip size of a SRAM(static random access memory) using aluminum assistance for a word line for operating the word line at a high speed is reduced. SOLUTION: To operate word lines 1 at a high speed, aluminum wirin...

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Bibliographic Details
Main Author SARUWATARI YASUHIRO
Format Patent
LanguageEnglish
Published 22.01.1999
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device in which the chip size of a SRAM(static random access memory) using aluminum assistance for a word line for operating the word line at a high speed is reduced. SOLUTION: To operate word lines 1 at a high speed, aluminum wirings 2 arranged in parallel to the word lines 1 are arranged in halfway portions from the center of the word lines 1 to both ends thereof, and a signal line and a power-supply lines 10, 11 are arranged in areas from the ends of the aluminum wirings 2 to the ends of the word lines 1, in parallel to a digit line 4, using the same metal wiring layer as the aluminum wiring 2. Thus, the word lines 1 can be operated in substantially the same operating time as the operating time of a word line of a SRAM using a conventional aluminum assist method for arranging the aluminum wiring 2 from one end to the other end of a memory array in parallel to the word line 1. In addition, since the signal line and the power-supply lines 10, 11 are arranged inside of a memory cell, the chip size can be reduced.
Bibliography:Application Number: JP19970169234