MAGNETORESISTANCE EFFECT ELEMENT

PROBLEM TO BE SOLVED: To reduce the occupying ratio of a characteristic deteriorated section from the side face of a magnetoresistance effect element, which occurs when the element is worked in the entire body of the element and, at the same time, to improve the characteristics of the element by imp...

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Bibliographic Details
Main Authors KUME MINORU, TANUMA TOSHIO
Format Patent
LanguageEnglish
Published 18.06.1999
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
MAGNETS
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
TESTING
TRANSFORMERS
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Summary:PROBLEM TO BE SOLVED: To reduce the occupying ratio of a characteristic deteriorated section from the side face of a magnetoresistance effect element, which occurs when the element is worked in the entire body of the element and, at the same time, to improve the characteristics of the element by improving the heat radiating characteristic of the element. SOLUTION: A magnetoresistance effect element consists of a laminated film SF, which has a rectangular planar shape having its longer sides (b) in a direction perpendicular to the changing direction of an external magnetic field and the central part of which has a rectangular planar shape (having longer sides (a) and shorter sides (b)), having a shorter sides (c) in a direction perpendicular to the changing direction of the external magnetic field. The laminated film SF is successively formed by laminating a base film, an antiferromagnetic layer, a magnetization-fixed layer 4 which has an inferior soft magnetic characteristic and an axis of easy magnetization, in parallel with the changing direction of the external magnetic field, a nonmagnetic metal layer, a magnetization-free layer 6 which has a superior soft magnetic characteristic and an axis of easy magnetization which is perpendicular to the changing direction of the external magnetic field upon a substrate 1. In the region where the magnetization-free layer 6 does not exist, a laminated film SF' is formed by successively laminating the layers from the base film to the nonmagnetic metal layer upon the substrate 1 and a magnetic domain control film 9 and electrode layers 10a and 10b are formed on the laminated film SF'.
Bibliography:Application Number: JP19970341885