FILM FORMING METHOD FOR SOLID ELECTROLYTE

• Main Authors: KANEDA NAMIKO, MOCHIZUKI MASATAKA, NAGATA MASAKATSU, IWAZAWA TSUTOMU
• Format: Patent
• Language: English
• Published: 18.06.1999
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To form a dense soil electrolyte film by applying MOCVD at 1000 deg.C or above. SOLUTION: In this film forming method of solid electrolyte, organic metal yttrium triacetylacetonato containing a solid electrolyte material and zirconium tetrakisacetylacetonato are deposited by the metal organic chemical vapor deposition(MOCVD) on a base material 63 to form the film of a solid electrolyte 68. The deposition temperature of the organic metal is set to 100 deg.C or above. When this MOCVD is applied at a high temperature of 1000 deg.C or above like the electrochemical deposition method (EVD-CVD), the film structure of the solid electrolyte 68 deposited on the base material 63 is made dense, and the film of the solid electrolyte 68 can be safely formed without generating chloride exhaust during its deposition process.