MEMBER HAVING ANTI-FOGGING THIN FILM AND ITS PRODUCTION

• Main Authors: OHASHI KAZUNORI, KIMURA FUMITO, NAKAMURA TORU
• Format: Patent
• Language: English
• Published: 08.06.1999
• Edition: 6
• Subjects: AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS BASED THEREON; DIFFUSION TREATMENT OF METALLIC MATERIAL; GENERAL PROCESSES OF COMPOUNDING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; ORGANIC MACROMOLECULAR COMPOUNDS; PHYSICS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; THEIR PREPARATION OR CHEMICAL WORKING-UP; WORKING-UP

PROBLEM TO BE SOLVED: To improve the anti-fogging property of the anti-fogging thin film consisting of an inorg. compd. having an extremely small static contact angle of water and the durability thereof by forming the anti-fogging thin film on a base material. SOLUTION: The static contact angle of the water is nearly 0 deg.. A thin film consisting of the inorg. compd. is formed on the coating layer on the base material. The anti-fogging thin film preferably has an antireflection effect. A substrate 15 is installed on the substrate holder 14 within the chamber of the sputtering apparatus. Si, Al, Zr, Ti, Mg, etc., are used for the materials of metallic targets 13, 19. The sputtering gases introduced into deposition chamber 12, 20 from gaseous argon introducing ports 11, 21 are ionized by a glow discharge to drive out the metal atoms of the metallic targets 13, 19. The substrate 15 on which these atoms are deposited at a film thickness of several atoms to 10,000 moves together with the axially rotating substrate holder 14 to a reaction chamber 17 where the inorg. compd. thin film is obtd. by the action with the reactive gases of oxygen, hydrogen, fluorine, nitrogen, etc., formed to a plasma form by a high-frequency coil.