FORMING METHOD OF TITANIUM NITRIDE BARRIER LAYER AND SEMICONDUCTOR DEVICE CONTAINING TITANIUM NITRIDE BARRIER LAYER

• Main Authors: CATABAY WILBUR G, HSIA WEI-JEN, ZHAO JOE W
• Format: Patent
• Language: English
• Published: 02.06.1999
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a method for forming a titanium nitride barrier layer which has high follow-up property, good step coverage and low resistivity. SOLUTION: In a method for forming a titanium nitride barrier layer in a partly manufactured electronic device, a process for depositing a first titanium nitride sublayer 40 on the partly manufactured electronic device at a first temperature, and a process for depositing a second titanium nitride sublayer 42 on the first titanium nitride sublayer 40 at a second temperature are provided. In this case, the second temperature is set higher than the first temperature.