MANUFACTURE OF SEMICONDUCTOR DEVICE

• Main Author: YAMAGUCHI MINEO
• Format: Patent
• Language: English
• Published: 21.05.1999
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To generate absorption force during a processing at the time of fixing a semiconductor substrate with static electricity and to speedily transport the semiconductor substrate after the processing terminates by feeding back the DC voltage measurement value of a DC voltage measuring device provided in a reaction room to a DC power controller provided outside the reaction room. SOLUTION: The semiconductor substrate 4 is installed on a supporting device and etching gas is introduced into the reaction room 5. Plasma is discharged and a silicon film is etched. Cooling gas is introduced between the semiconductor substrate supporting device and the semiconductor substrate 4 after electrostatic absorption force is generated in such a state. Adsorption force is decided by the sum of self-bias generated by plasma discharge, Coulomb force from an electric field by a DC power source 7 and gas pressure for cooling the back of the semiconductor substrate 4. The output value of the DC power source 7 is controlled so that adsorption force does not become '0' against Vdc measured by a back cooling gas pressure value, and the DC power source 7 is controlled so that adsorption force becomes '0' immediately before the processing terminates.