MANUFACTURE OF INTEGRATED CIRCUIT

PROBLEM TO BE SOLVED: To reduce a generation of counter-doping due to cross diffusion, by sequentially laminating a polysilicon blanket layer, a titanium layer, a titanium nitride layer and a fireproof metal silicide layer, and by forming a gate stack while patterning the laminate. SOLUTION: A first...

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Bibliographic Details
Main Authors MERCHANT SAILESH MANSINH, MA YI, LEE JEAN LING
Format Patent
LanguageEnglish
Published 30.04.1999
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To reduce a generation of counter-doping due to cross diffusion, by sequentially laminating a polysilicon blanket layer, a titanium layer, a titanium nitride layer and a fireproof metal silicide layer, and by forming a gate stack while patterning the laminate. SOLUTION: A first portion 171 of a polysilicon blanket layer 17 is a P-doped n<+> gate, and a second portion 172 is a B-doped p<+> gate. However, when the n<+> gate comes in contact with the p<+> gate, counter-doping occurs. To overcome this problem, the layer 17 is covered with a titanium layer 19. The layer 19 improves the gate resistance, so that a getter for B is provided. Note that a titanium nitride layer 21 forms a barrier against the diffusion of B and P, thereby preventing the occurrence of counter-doping. As a result of this gate structure, diffusion through a fireproof metal silicide layer 23 formed on the structure occurs little.
Bibliography:Application Number: JP19980236753