MANUFACTURE OF THIN-FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY DEVICE

• Main Author: YAMADA YUMIKO
• Format: Patent
• Language: English
• Published: 23.04.1999
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PROBLEM TO BE SOLVED: To provide a manufacturing method through which a highly reliable thin-film transistor having superior electrical characteristics and high durability can be formed. SOLUTION: After a polysilicon film has been formed on an insulating substrate 1, the substrate 1 is divided into elements having a prescribed shape. Then, after a gate insulating film 4 has been formed on the upper surface of each divided polysilicon film, a gate electrode 5 is formed on the upper surface of the insulating film 4. Thereafter, a source region 6, a drain region 7, and a channel region 8 are formed by implanting impurity ions into the polysilicon film by using the gate electrode 5 as a mask. After the regions 6, 7, and 8 have been formed, an inter-layer insulating film 9 is formed on the upper surface of the gate insulating film 4, and the source and the drain areas 6 and 7 are exposed by forming contact holes through part of the insulating film 9. Then, after the interface is stabilized by performing heat treatment at a temperature of >=400 deg.C, metal wires 11 are ohmic-contacted with the source and the drain regions 6 and 7 via the contact hole.