SEMICONDUCTOR SUBSTRATE AND MANUFACTURE THEREOF

• Main Authors: NITTA TAKEHISA, USHIKI TAKEO, OMI TADAHIRO, SHINOHARA HISAKUNI, TANAKA NOBUYOSHI
• Format: Patent
• Language: English
• Published: 13.04.1999
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To keep a stable electromagnetic shield effect, by forming between a conductive material layer and insulation layer or between a base and conductive material layer a reaction deterrent layer made of a material different from the conductive material layer. SOLUTION: A manufacturing method comprises steps of forming an insulation film 2 on the surface made of a single crystal semiconductor of a first member 1, forming a first reaction deterrent layer 3 on the insulation film 2, forming a first reaction precursor layer 4 thereon, forming a second reaction deterrent layer 6 on the surface of a second member 5, forming a second reaction precursor layer 7 on the surface of the layer 6, contacting the first and the second precursor layers 4, 7 at suitable temp. to cause an alloying reaction therebetween to form a reaction layer 8, thereby adhering the first member 1 to the second member 5, and removing unwanted portions from the second member 5 by the polishing or other method, with leaving a wanted layer 10 of the first member 1.