SEMICONDUCTOR DEVICE HAVING CAPACITOR

PROBLEM TO BE SOLVED: To provide a semiconductor device having capacitances having barrier layers, which do not cause the mutual diffusion between Pt and Si or Pt and Ti, if heated at a high temp. SOLUTION: A capacitor 30 has a plug 11, barrier layers 14a, 14b and a lower electrode layer 15. The plu...

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Bibliographic Details
Main Authors UTATSU TAKASHIGE, HANABUSA KIYOSHI, FUJITA YASUSHI, MATSUSHITA MAKOTO, SHO YASUSHI, KASHIWABARA KEIICHIROU
Format Patent
LanguageEnglish
Published 10.04.1998
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device having capacitances having barrier layers, which do not cause the mutual diffusion between Pt and Si or Pt and Ti, if heated at a high temp. SOLUTION: A capacitor 30 has a plug 11, barrier layers 14a, 14b and a lower electrode layer 15. The plug 11 is formed on an impurity region 8 and contains Si. The barrier layer 14a is formed on the plug 11 and contains Ti nitride. The barrier layer 14b is formed on the barrier layer 14a and contains TiO2 . The lower electrode layer 15 is formed on the barrier layer 13b and contains Pt.
Bibliography:Application Number: JP19960243745