SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To obtain a high-precision resistance element and secure the high reliability of wiring partially removing a metal wiring and exposing barrier metal after pattern lithography of the metal wiring having barrier metal. SOLUTION: A barrier metal film 3 and Al alloy metal 4 prevent...

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Bibliographic Details
Main Author KOIKE MICHIO
Format Patent
LanguageEnglish
Published 31.03.1998
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To obtain a high-precision resistance element and secure the high reliability of wiring partially removing a metal wiring and exposing barrier metal after pattern lithography of the metal wiring having barrier metal. SOLUTION: A barrier metal film 3 and Al alloy metal 4 preventing diffusion from entering into the semiconductor are formed using a sputtering method. A metal wiring is formed applying photoetch on the Al alloy 4. A resistance element is formed by removing Al alloy 4 and exposing barrier metal 3 which prevents diffusion from entering into the semiconductor in the expected forming area for the resistance element by applying an etching process which forms the pattern with lithography. Partially removing metal wiring and exposing the barrier metal 3 after forming the pattern of metal wiring having the barrier metal 3, a high-precision sheet resistance 5 can be obtained as well as highly reliable wiring can be secured.
Bibliography:Application Number: JP19970191680