FORMATION OF SIC THIN COATING ON HIGH POLYMER SUBSTRATE BY PLASMA CVD AND DEVICE THEREFOR

• Main Authors: TAMAMAKI HIROAKI, NOMURA MASAYA, SANO KEIICHIRO
• Format: Patent
• Language: English
• Published: 31.03.1998
• Edition: 6
• Subjects: AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS BASED THEREON; DIFFUSION TREATMENT OF METALLIC MATERIAL; GENERAL PROCESSES OF COMPOUNDING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; THEIR PREPARATION OR CHEMICAL WORKING-UP; WORKING-UP

PROBLEM TO BE SOLVED: To thinly deposit transparent SiC coating on the surface of plastics and to improve the surface hardness without deteriorating the designing properties thereof by utilizing ECR plasma CVD technology capable of low temp. deposition of coating of high quality. SOLUTION: The magnetic field is applied to the inside of a plasma generating chamber 1 by magnetic coils 2 arranged around the plasma generating chamber 1, microwaves are introduced into the plasma generating chamber, an upstream gas is introduced into the plasma generating chamber to generate ECR plasma, a downstream gas is fed thereto from an introducing port 6, and furthermore, the ECR plasma is passed through meshes 14 set between the introducing port 6 and the high polymer substrate 7 or between the plasma generating chamber and the introducing port, by which SiC coating is deposited on the surface of the high polymer substrate.