SEMICONDUCTOR LASER

• Main Authors: NAGASAKI HIROKI, UCHIDA SHIRO, IWAMOTO KOJI, TOJO TAKESHI, HIRATA SHOJI
• Format: Patent
• Language: English
• Published: 17.03.1998
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

PROBLEM TO BE SOLVED: To provide a semiconductor laser which can realize a stable self- oscillation semiconductor laser device, wherein drive voltage can be lessened and a radiation angle in the horizontal direction in a far-field image pattern can be enlarged and the far-field image pattern can be shaped. SOLUTION: In an AlGaInP buried ridge-type semiconductor laser, wherein spaces on both sides a ridge stripe section 7 constituted of an upper layer of a p-type AlGaInP clad layer 4, a p-type GaInP intermediate layer 5, and a p-type GaAs contact layer 6 are filled with n-type GaAs current narrowing layers 8, tapered regions 7a of the length L1 are formed on both sides of the ridge stripe section 7 in the resonator length direction, with the total length 2L1 of the tapered regions 7a being set at least 1/10 of the resonator length L. The width W1 at both end faces in the resonator length direction of the ridge stripe section 7 and the central width W2 in the resonator length direction are so selected as to satisfy W1 <W2 , W1 <=5μm, W2 <=7μm.