FORMATION OF P-TYPE II-VI COMPOUND SEMICONDUCTOR

• Main Authors: OKUYAMA MINEO, YASUDA TAKENORI, KITSUNO YUTAKA, TOYODA TAKEHIRO
• Format: Patent
• Language: English
• Published: 20.02.1998
• Edition: 6
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To form P-type II-VI compound semiconductor whose main component is ZnSe, by using compound which contains at least one covalent bond of group II element and nitrogen in a molecule, as P-type dopant. SOLUTION: In the growth of a ZnSe crystal thin film, firstly an undoped ZnSe thin film is grown on a thermally cleaned GaAs substrate 28. Just after that, P-type dopant is added by carrier gas, and an N doped P-type ZnSe thin film is grown. In this case, compound having at least one covalent bond of Mg or Cd and nitrogen in a molecule is used as the P-type dopant. N atoms are taken in the ZnSe crystal while maintaining Zn-N covalent bond, so that N atoms are effectively replaced in Se lattice points, and high activation ratio as acceptor can be obtained. Thereby P-type II-VI compound semiconductor whose main body is ZnSe wherein P-type carrier concentration in semiconductor is at leant 1×10 cm<-3> can be formed.