SEMICONDUCTOR MULTILAYERED FILM REFLECTION MIRROR AND ITS PRODUCTION

• Main Authors: NARASAKI WATARU, SING VIRAHAMPAL, SATO SEIYA
• Format: Patent
• Language: English
• Published: 18.12.1998
• Edition: 6
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; PHYSICS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To obtain a semiconductor multilayered film reflection mirror having excellent characteristics by doping the semiconductor with a p-type carrier to high density while strictly controlling the film thickness. SOLUTION: A semiconductor multilayered film reflection mirror is produced by alternately depositing at least two kinds of compound semiconductors having different refractive indices by using a gas source molecular beam epitaxy device equipped with a turbo molecular pump as the main evacuating device and by using trimethylgallium as a p-type doping gas. In this process, the film forming rate of each compound semiconductor layer is previously measured so that when one layer is deposited to the specified film thickness, supplying of the doping gas and a part or whole of the source material is temporarily stopped to stop the growth of the film. During stopping the film forming process, the trimethylgallium remaining in the reaction device is deposited to grow the film to consume the residual trimethylgallium. Then supplying of the doping gas and the next semiconductor source is treated to form the next semiconductor film. This process is repeated for the specified layers.