MANUFACTURE OF SEMICONDUCTOR DEVICE

• Main Authors: SHIMA SHOHEI, MATSUO MIE, NAKAMURA SHINICHI, KANEKO HISAFUMI
• Format: Patent
• Language: English
• Published: 03.02.1998
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To enable easy improvement in migration durability by forming a wiring having a stress film formed thereon on a substrate and then heat-treating the wiring in which stress is generated by the stress film so as to increase the grain size of the wiring. SOLUTION: A wiring 3 having a stress film 4 formed thereon is formed on a substrate 1, and the wiring 3 in which stress is generated by the stress film 4 is heat-treated, thus increasing the grain size of the wiring 3. For example, an insulating film 2 is formed on the silicon substrate 1 having an element formed thereon, and after an Al film to be the Al wiring 3 is formed on the insulating film 2, the Al film is patterned to form the Al wiring 3. At this stage, the grain size of the Al wiring 3 is still small. Then, a silicon nitride film having a thickness of 0.1μm and a compressive stress of 6×10 dyne/cm is formed as the high-stress film 4 on the entire surface by a sputtering method. Then, the silicon substrate 1 is heat-treated at 450 deg.C for 10 minutes, thus increasing the grain size of the Al wiring 3. Finally, a protective insulating film 5 made of SiO2 is formed on the entire surface.