ETCHING METHOD

PROBLEM TO BE SOLVED: To prevent corrosion of Al(aluminum) or an alloy thereof in a wiring material. SOLUTION: A patterned Al alloy film is formed in a wafer 36 to be treated. When an Al alloy film of the wafer 36 is oxidized, the wafer 36 is set in a plasma device and a dummy wafer 37b is set up an...

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Bibliographic Details
Main Author KASE MASA
Format Patent
LanguageEnglish
Published 04.12.1998
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To prevent corrosion of Al(aluminum) or an alloy thereof in a wiring material. SOLUTION: A patterned Al alloy film is formed in a wafer 36 to be treated. When an Al alloy film of the wafer 36 is oxidized, the wafer 36 is set in a plasma device and a dummy wafer 37b is set up and down the wafer 36. High frequency is applied to an electrode 31 for generating plasma and oxidation treatment is carried out. The oxidation treatment is carried out on such conditions as not to allow a change value of each flat band voltage in a plurality of MOS capacitors formed dispersively in the wafer 36 before and after oxidation treatment to vary.
Bibliography:Application Number: JP19970128741