SEMICONDUCTOR DEVICE AND WIRING FORMATION METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a semiconductor device and a wiring formation method capable of preventing the corrosion of aluminum, even in the case of using gas containing chlorine and the gas of a chlorine group at the time of the formation of a titan film and a titan nitride film or at the tim...

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Bibliographic Details
Main Author KAWASHIMA ATSUSHI
Format Patent
LanguageEnglish
Published 17.11.1998
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device and a wiring formation method capable of preventing the corrosion of aluminum, even in the case of using gas containing chlorine and the gas of a chlorine group at the time of the formation of a titan film and a titan nitride film or at the time of the etching work of the aluminum. SOLUTION: After forming an aluminum wire 140 provided with a titan nitride film at upper and lower parts, a boiling processing in boiling pure water is performed for about one minute for the entire substrate. By the processing, aluminum hydroxide 17 is formed on the side wall of the exposed aluminum wire 140. The aluminum hydroxide film 17 functions as a protective film against corrosion by the chlorine of the aluminum, and the corrosion of the aluminum wire 140 by the remaining chlorine is hardly generated.
Bibliography:Application Number: JP19970113789