COMPONENT ISOLATING METHOD OF SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide an element isolating method of a semiconductor device wherein STI(shallow trench isolation) is used. SOLUTION: A field oxide region of a semiconductor substrate 100 is exposed, a first, a second and a third insulating film patterns 104a, 106a and 108a are formed, and...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English |
Published |
13.11.1998
|
Edition | 6 |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | PROBLEM TO BE SOLVED: To provide an element isolating method of a semiconductor device wherein STI(shallow trench isolation) is used. SOLUTION: A field oxide region of a semiconductor substrate 100 is exposed, a first, a second and a third insulating film patterns 104a, 106a and 108a are formed, and a trench 112 is formed on a field region by etching the substrate with a mask. A fourth insulating film 114 which has a protruding part 115 on an active region is formed while burying is performed by a plasma CVD method wherein vapor deposition and etching simultaneously progress. After a mask layer 116 is formed on the fourth insulating film 114, a party of the mask layer 116 of the protruding part 115 and the fourth insulating film 114 are removed, and a mask pattern 116a exposing the fourth insulating film 114 on the active region is formed. By using the mask pattern 116a as a mask, the exposed fourth insulating film 114 is etched, and a fourth insulating film pattern 114a exposing the second insulating film pattern 106a is formed. The mask pattern 116a and the fourth and the first insulating film patterns 114a and 104a are removed. |
---|---|
AbstractList | PROBLEM TO BE SOLVED: To provide an element isolating method of a semiconductor device wherein STI(shallow trench isolation) is used. SOLUTION: A field oxide region of a semiconductor substrate 100 is exposed, a first, a second and a third insulating film patterns 104a, 106a and 108a are formed, and a trench 112 is formed on a field region by etching the substrate with a mask. A fourth insulating film 114 which has a protruding part 115 on an active region is formed while burying is performed by a plasma CVD method wherein vapor deposition and etching simultaneously progress. After a mask layer 116 is formed on the fourth insulating film 114, a party of the mask layer 116 of the protruding part 115 and the fourth insulating film 114 are removed, and a mask pattern 116a exposing the fourth insulating film 114 on the active region is formed. By using the mask pattern 116a as a mask, the exposed fourth insulating film 114 is etched, and a fourth insulating film pattern 114a exposing the second insulating film pattern 106a is formed. The mask pattern 116a and the fourth and the first insulating film patterns 114a and 104a are removed. |
Author | KIM CHANGGYU KO SEKICHI HAKU BINSHU |
Author_xml | – fullname: HAKU BINSHU – fullname: KO SEKICHI – fullname: KIM CHANGGYU |
BookMark | eNrjYmDJy89L5WQwcvb3DfD3c_ULUfAM9vdxDPH0c1fwdQ3x8HdR8HdTCHb19XT293MJdQ7xD1JwcQ3zdHblYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxXgEehgbGBsZGlgaOxsSoAQCNnCjf |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
Edition | 6 |
ExternalDocumentID | JPH10303290A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_JPH10303290A3 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 11:22:44 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_JPH10303290A3 |
Notes | Application Number: JP19980001022 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19981113&DB=EPODOC&CC=JP&NR=H10303290A |
ParticipantIDs | epo_espacenet_JPH10303290A |
PublicationCentury | 1900 |
PublicationDate | 19981113 |
PublicationDateYYYYMMDD | 1998-11-13 |
PublicationDate_xml | – month: 11 year: 1998 text: 19981113 day: 13 |
PublicationDecade | 1990 |
PublicationYear | 1998 |
RelatedCompanies | SAMSUNG ELECTRON CO LTD |
RelatedCompanies_xml | – name: SAMSUNG ELECTRON CO LTD |
Score | 2.4954512 |
Snippet | PROBLEM TO BE SOLVED: To provide an element isolating method of a semiconductor device wherein STI(shallow trench isolation) is used. SOLUTION: A field oxide... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | COMPONENT ISOLATING METHOD OF SEMICONDUCTOR DEVICE |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19981113&DB=EPODOC&locale=&CC=JP&NR=H10303290A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1bS8MwFD7MKeqbTkXnhQrSt2LsRdaHIluS2hbblK0bexv2BvrQDVfx75tTVueLvoUEcjnk5ITk-84HcEcsPSOmmSJFudDM7DXXbLlNNGswSGW0slATEtEW0aM3NYO5Ne_Ae8uFafKEfjXJEaVHZdLf6-a8Xm0fsViDrVzfp2-yavnkJg5T85YuhsrpKhs5PBZMUJVSJ4jVaOx4KKdl6DYZ7sAuXqMxzz6fjZCVsvodUtwj2Itlb1V9DJ2i6sEBbZXXerAfbj68ZXHje-sT0KkIYxHxKFH8iXgZJn70rIQ88QRThKtM0KAiYlOaiLHC-Myn_BRuXZ5QT5ODL35Wugji7TyNM-hWy6o4ByW3S1SYksE4LxHGYucFChk86CXJSEGMC-j_3U__v8ZLOGxIdohrM66gW398FtcyytbpTWOeb2BZetk |
link.rule.ids | 230,309,786,891,25594,76903 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_mFOebTkXnVwXpW7H2Q9eHIlvS2tY1KVs29lbWj4E-dMNV_PdNwuZ80beQwCU5cjkuud_9AO5028h1y8oERLnUrHxWaA4_Jprd7WbcW9mCE1JkW5DHYGxFU3vagPcNFkbWCf2SxRG5ReXc3mt5Xy-3j1hY5lau7rM33rV49pmL1WIDFxPM6Sruu15CMUUqQm6UqGToBoJOyzQcvbcDu088JJSh0qQvUCnL3y7FP4S9hEur6iNolFUbWmjDvNaG_Xj94c2ba9tbHYOBaJxQ4hGmhCM66LGQvCixxwKKFeorI6FQSvAYMTpUsDcJkXcCt77HUKDxydOfnaZRsl2neQrNalGVZ6AUzlwwTHFnXMxFGotTlILI4MGY67le6uY5dP6W0_lv8AZaAYsH6SAkrxdwIAF3IsfNvIRm_fFZXnGPW2fXUlXfQu99ww |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=COMPONENT+ISOLATING+METHOD+OF+SEMICONDUCTOR+DEVICE&rft.inventor=HAKU+BINSHU&rft.inventor=KO+SEKICHI&rft.inventor=KIM+CHANGGYU&rft.date=1998-11-13&rft.externalDBID=A&rft.externalDocID=JPH10303290A |