FERROELECTRIC ELEMENT

• Main Author: TAKAHASHI YUKIMI
• Format: Patent
• Language: English
• Published: 23.10.1998
• Edition: 6
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CORRECTION OF TYPOGRAPHICAL ERRORS; CRYSTAL GROWTH; ELECTRICITY; i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; LINING MACHINES; METALLURGY; PERFORMING OPERATIONS; PRINTING; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SELECTIVE PRINTING MECHANISMS; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; STAMPS; TRANSPORTING; TYPEWRITERS; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To obtain a PZT film which is thick and good in piezoelectric characteristics by using a two-layered structure composed of a first layer film formed without mixing binder in material, and a second layer film formed on the first layer film by mixing binder in the material. SOLUTION: On a silicon substrate, a platinum electrode is formed, on which PZT precursor solution is spread by spin coating or dip coating. By drying and baking the solution, perovskite PZT structure is obtained. Thereby a first layer film oriented in the (100) direction is formed on the platinum electrode. On the first layer film, PZT gel containing PZT fine-grains is spread by bar code or the like and then dried. After that, in order to decompose the bar code, main baking is performed, and a second layer film having a perovskite PZT structure which has grown using the first layer film as a nucleus. In this manner, the (100) orientation PZT film is formed on the platinum electrode. Thereby a dense two-layered film, which is thick and excellent in functionality, is obtained.