MANUFACTURE OF SEMICONDUCTOR CAPACITOR AND SEMICONDUCTOR CAPACITOR FORMED BY METHOD THEREFOR

• Main Authors: LEE JUNG-KYU, KANG SEONGHUN, KOH YOUNG-LARK
• Format: Patent
• Language: English
• Published: 23.10.1998
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a capacitor manufacturing method by which the surface area of the lower electrode of the semiconductor capacitor is made large and the capacitance can be fully secured, and the semiconductor capacitor formed by this method. SOLUTION: This manufacturing method of a semiconductor capacitor includes the step which forms the lower electrode pattern of a capacitor whose one part is in contact with a semiconductor substrate 10 through an insulating layer 12, the step which forms an HSG(hemispherical grained) silicon layer 18 on the exposed surface of the lower electrode pattern, the step which nitrides the surface of a lower electrode 16 wherein the HSG silicon layer is continuously formed after the HSG silicon layer is formed, and the step which forms a nitride layer 22 on the surface of the nitrided lower electrode.