METHOD OF FORMING II-VI COMPOUND SEMICONDUCTOR AND GROUP VI MATERIAL FOR VAPOR GROWTH OF II-VI COMPOUND SEMICONDUCTOR

• Main Authors: OKUYAMA MINEO, YASUDA TAKENORI, KITSUNO YUTAKA
• Format: Patent
• Language: English
• Published: 09.10.1998
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To manufacture a II-VI compound semiconductor epitaxial wafer whose hillock density is specified, by forming II-VI compound semiconductor by using compound expressed by specific formulas. SOLUTION: Compound expressed by a formula I is used as group VI element material. In the formula I, X is one out of Si, Ge, and Sn, Y is one out of Se and S; R , R and R are hydrogen or C1-C6 hydrocarbon groups, and R4 is a C1-C2 hydrocarbon group. Compound expressed by a formula II is used as group VI element material. In the formula II, X is one out of Si, Ge and Sn, Y is one out of Se and S, and R , R , R , R , R and R are hydrogen or C1-C6 hydrocarbon groups. Thereby a II-VI compound semiconductor epitaxial wafer whose hillock density is smaller than 10/cm can be manufactured.