THIN-FILM CAPACITOR MADE OF TANTALUM OXIDE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin-film capacitor made of tantalum oxide. SOLUTION: A thin-film capacitor 20 has a lower electrode 23 that is made of TaNx a dielectric layer 26 that is made of tantalum oxide where nitrogen or silicon is doped (TaNx O5 or Ta2 SiO being...

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Bibliographic Details
Main Authors TAI KING L, RATONAJI RAO KOORA
Format Patent
LanguageEnglish
Published 25.09.1998
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
CAPACITORS
CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin-film capacitor made of tantalum oxide. SOLUTION: A thin-film capacitor 20 has a lower electrode 23 that is made of TaNx a dielectric layer 26 that is made of tantalum oxide where nitrogen or silicon is doped (TaNx O5 or Ta2 SiO being subjected to anode oxidation), and an upper electrode 27 containing chromium. As a result, the leakage current of the capacitor 20 is equal to or less than 1nA/cm or less, a breakdown electric field is 4MV/cm or larger, and a capacitance density is 70nF/cm . Also, the capacitor 20 shows a stable performance even at 350 deg.C and the area can be set to a width of 1mm or more.
Bibliography:Application Number: JP19980043609