SEMICONDUCTOR WAFER, MANUFACTURE THEREOF, SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To suppress the dislocation in an epitaxial wafer to obtain a good semiconductor wafer by providing a semiconductor single crystal layer on a semiconductor substrate contg. B and C. SOLUTION: An Si wafer 101 is implanted with B ions 103 and C ions 104, heat treated at 100 deg.C...

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Bibliographic Details
Main Authors ISHIDA HIDETSUGU, ISOMAE SEIICHI
Format Patent
LanguageEnglish
Published 11.09.1998
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To suppress the dislocation in an epitaxial wafer to obtain a good semiconductor wafer by providing a semiconductor single crystal layer on a semiconductor substrate contg. B and C. SOLUTION: An Si wafer 101 is implanted with B ions 103 and C ions 104, heat treated at 100 deg.C in an H-atmosphere of an epitaxial growth furnace for 15min to recover the ion implanting damage, a layer 105 of high-concn. B and C is formed in the Si wafer 101, a semiconductor single crystal layer 102 is formed on the surface of the wafer 101 contg. the high-concn. layer 105, thereby suppressing the dislocation in the epitaxial wafer to produce a good Si wafer 101.
Bibliography:Application Number: JP19970042034