MANUFACTURE OF SEMICONDUCTOR DEVICE

• Main Author: MATSUNO TOMOYUKI
• Format: Patent
• Language: English
• Published: 21.08.1998
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To reduce the crystal defects present in the silicon bulk of only an element activating region of a semiconductor substrate, by forming a field oxidation film on the surface of the semiconductor substrate through a selective oxidation method, and by thereafter heat-treating the substrate in an atmosphere containing hydrogen, using the field oxidation film as a mask. SOLUTION: After a field oxidation film 2 is formed on a silicon substrate 1 by a selective oxidation method, using this field oxidation film 2 as a mask, the silicon substrate 1 is heat-treated with a hydrogen gas. Resultantly the surface of the silicon substrate 1 is annealed by the hydrogen gas, the crystal defects present in the silicon bulk of an element activating region (a) of the silicon substrate 1 are reduced and inactivated. Also, since no crystal defect present in the silicon bulk of a region (b) below the field oxidation film 2 of the silicon substrate 1 is reduced and the crystal defects or interstitial oxygens present in the silicon bulk of the region (b) remain as they are, a gettering effect is maintained and slip, etc., are hardly generated. Thereby, the crystal defects present in the silicon bulk of only the element activation region (a) can be vanished.