DRILLING METHOD FOR SILICON SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To drill fine holes in a silicon single crystal at a high speed by setting the sending speed within a specified range at a specified frequency and amplitude. SOLUTION: To a rotating diamond core drill 1, a high frequency vibration is given from an oscillator 2 through a horn 3,...

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Bibliographic Details
Main Authors YANAGIMOTO HIDEKI, TAKE YOSHIHIRO, MICHITSU TAKESHI
Format Patent
LanguageEnglish
Published 04.08.1998
Edition6
Subjects
BORING
MACHINE TOOLS
METAL-WORKING NOT OTHERWISE PROVIDED FOR
PERFORMING OPERATIONS
TRANSPORTING
TURNING
WORKING CEMENT, CLAY, OR STONE
WORKING STONE OR STONE-LIKE MATERIALS
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Summary:PROBLEM TO BE SOLVED: To drill fine holes in a silicon single crystal at a high speed by setting the sending speed within a specified range at a specified frequency and amplitude. SOLUTION: To a rotating diamond core drill 1, a high frequency vibration is given from an oscillator 2 through a horn 3, and the drill is in contact with a specimen 6 being supported by a support section 4. A high frequency generator 5 is directly connected to the oscillator 2. When the diamond core drill 1 is made to be in contact with the surface of the silicon single crystal specimen 6, the specimen is drilled at a frequence of 60±1kHz, an amplitude of 1-5μm, preferably 1.5-3.0μm by the rotation and vertical vibration of the drill. The silicon single crystal can be drilled at a high sending speed of 2.0-6.0mm/sec.
Bibliography:Application Number: JP19970008413