DEVICE AND METHOD FOR WHITE POWDER REDUCTION IN SILICON NITRIDE DEPOSITION USING REMOTE PLASMA SOURCE CLEANING TECHNOLOGY

PROBLEM TO BE SOLVED: To reduce the occurrence of white powders in SiN deposition by heating a part of a wall in a process chamber, covering the substantial part of the wall with liners, and making a part of the plasma of cleaning gas generated in a remote chamber connected to the inner part of the...

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Bibliographic Details
Main Authors ROBERT M ROBERTSON, KUANYUAN SHAN, KAM S ROU, DAN MEIDAN
Format Patent
LanguageEnglish
Published 31.07.1998
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
CLEANING
CLEANING IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
PERFORMING OPERATIONS
PREVENTION OF FOULING IN GENERAL
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
TRANSPORTING
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Summary:PROBLEM TO BE SOLVED: To reduce the occurrence of white powders in SiN deposition by heating a part of a wall in a process chamber, covering the substantial part of the wall with liners, and making a part of the plasma of cleaning gas generated in a remote chamber connected to the inner part of the chamber flow into the process chamber. SOLUTION: The respective walls of a chamber 10 are independently heated, and the liners 15 as two parallel plates lining the prescribed part of the inner wall 70 of the chamber 10 are heated by convection, conduction and radiation from at least three elements in the chamber 10 and on the chamber 10. A cleaning gas system 69 has a conductive valve and a flow control mechanism, which control the flow of precursor gas, and has a conductor 67 making gas flow into a remote activating chamber 46 detached by a prescribed distance on the outer side of the deposition chamber 10. A power exciting source, a high-output microwave generator 48, for example, connects the remote activating chamber 46 to the deposition chamber 10 through an inflow port 33.
Bibliography:Application Number: JP19970324651