SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

PROBLEM TO BE SOLVED: To provide a semiconductor device which has highly reliable wiring by preventing the corrosion of the wiring and a method for manufacturing the device. SOLUTION: After a titanium nitride film 13 is formed on an insulating film 12 as a barrier metal, an aluminum film 14 (14a) an...

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Bibliographic Details
Main Author KAWASHIMA ATSUSHI
Format Patent
LanguageEnglish
Published 30.06.1998
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device which has highly reliable wiring by preventing the corrosion of the wiring and a method for manufacturing the device. SOLUTION: After a titanium nitride film 13 is formed on an insulating film 12 as a barrier metal, an aluminum film 14 (14a) and a reflection preventing film composed of a titanium nitride film 15 are successively formed on the film 13. Then a photoresist film 16 is formed on the titanium nitride film 15 and patterned and the titanium nitride films 13 and 15 and aluminum film 14 are etched by using the photoresist film 16 as a mask. After etching, recesses 17 are formed by performing ion sputtering on the film 12 so that the sputtered material 18 from the recesses 17 can adhere to the side wall of aluminum wiring 14a. The ion sputtering conduction is set so that the flow rate of an Ar gas, temperature, microwave output, high-frequency bias output, and pressure can respectively become 500scmm, 25 deg.C, 800W, 2kW, and 1Pa.
Bibliography:Application Number: JP19960335897