MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element and manufacture thereof, whereby a current flows in the thickness direction of a magnetoresistive effect film produced, without causing the electric short-circuit at the sides of the magnetoresistance effect film, and magnetic field...

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Bibliographic Details
Main Authors KUME MINORU, TANUMA TOSHIO
Format Patent
LanguageEnglish
Published 19.06.1998
Edition6
Subjects
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
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Summary:PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element and manufacture thereof, whereby a current flows in the thickness direction of a magnetoresistive effect film produced, without causing the electric short-circuit at the sides of the magnetoresistance effect film, and magnetic field detecting region of the magnetoresistive effect film is reduced. SOLUTION: A magnetoresistive effect element has a magnetoresistive effect film 10 on a lower electrode 2. The film 10 is selectively etched to leave this film 10 on a magnetic field-detecting region D. A current is flowed between an upper electrode layer 8, disposed on the magnetoresistance effect film 10 and lower electrode layer 2 for detecting the magnetic field from the change in its electric resistance. A protective film with respect to etching is provided over at least origins on the lower electrode layer 2 than the detecting region D.
Bibliography:Application Number: JP19960319254