SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

PROBLEM TO BE SOLVED: To remove the film rise in projection form from the pattern surface of a polyimide resin film, by forming a film of polyamide acid which is obtained by reacting tetracarboxylic acid dianhydride including the dianhydrous oxide expressed by the specified chemical formula and diam...

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Bibliographic Details
Main Author SEKINE HIROYOSHI
Format Patent
LanguageEnglish
Published 19.06.1998
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOSITIONS BASED THEREON
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
SEMICONDUCTOR DEVICES
THEIR PREPARATION OR CHEMICAL WORKING-UP
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Summary:PROBLEM TO BE SOLVED: To remove the film rise in projection form from the pattern surface of a polyimide resin film, by forming a film of polyamide acid which is obtained by reacting tetracarboxylic acid dianhydride including the dianhydrous oxide expressed by the specified chemical formula and diamine. SOLUTION: A resin film is formed by applying polyamide solution which is obtained by reacting tetracarboxylic acid dianhydride including acid dianhydride shown by general formula (among the formula, n shows an integer of 2-16) and diamine. Then, thereon a resist film is formed. Next, the exposure, the development, and the exfoliation of the resist film are performed, and then, polyamide acid is dehydrated and cyclized. Together with it, this is heat-treated at a temperature above the glass transition temperature of polyimide resin obtained finally and besides not less than 300 deg.C so as to form an interlayer insulating film and/or surface protective film of polyimide resin.
Bibliography:Application Number: JP19960316404