MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To manufacture a semiconductor device having superior element isolation characteristics without ion-implanting impurities for forming diffused layers of an LDD structure in a semiconductor substrate under an element insulating film. SOLUTION: Impurities for forming high-concent...

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Bibliographic Details
Main Author UMEBAYASHI HIROSHI
Format Patent
LanguageEnglish
Published 02.06.1998
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To manufacture a semiconductor device having superior element isolation characteristics without ion-implanting impurities for forming diffused layers of an LDD structure in a semiconductor substrate under an element insulating film. SOLUTION: Impurities for forming high-concentration diffused layers 23 are ion-implanted in a semiconductor substrate in a state that a gate electrode and the like are covered with an SiN film 25, sidewall spacers are formed of a polycrystalline Si film 26 and thereafter, the film 26 is subjected to anisotropic etching and moreover, the film 26 is oxidized to turn the film 26 into an SiO2 film 27. Owing to this, at the time of the formation of the sidewall spacers, as an SiO2 film 12 on an element isolation region is not etched, the thickness of the film 12 is not decreased and moreover, the film 26 can be completely annihilated.
Bibliography:Application Number: JP19960323416