PLASMA TREATING METHOD AND DEVICE THEREFOR

• Main Authors: INABA HIROSHI, KOKADO YUICHI, FUJIMAKI SHIGEHIKO, SASAKI SHINJI, OTSUBO TORU, HONDA YOSHINORI, ANAMI HIDETOSHI, KATAOKA HIROYUKI
• Format: Patent
• Language: English
• Published: 26.05.1998
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a method for executing plasma treatment in which bias potentials are generated on a substrate even without directly applying bias voltage from the outside, even in the case the substrate is not particularly composed of an electric conductor, and ion incidence is utilized, and to provide a device therefor in the case plasma treatment such as thin film formation by bias sputtering or CVD, etching working, heating or the like is executed to the surface of a substrate. SOLUTION: An electrode 7 is provided oppositely to a substrate 4 placed in a vacuum device 1, the electrode 7 and the surface on the side of the electrode of the substrate 4 are made noncontact, also, they are placed at the interval in which plasma is not generated or below, and the substrate and a high-frequency circuit generating plasma lie in an electrically insulated state. It is possible that the electric field is generated on the surface of the substrate and ion incidence is allowed to occur without bringing the surface of the substrate with the electrode, by which the states in which electric current concentrates on the contact point of the electrode to the substrate, and the evaporation of the film, abnormal discharge caused thereby and the defect in the application of the bias are generated as in the conventional manner can be prevented.