FORMATION OF SIO2 FILM BY PLASMA CVD

• Main Authors: TAMAMAKI HIROAKI, NOMURA MASAYA, SANO KEIICHIRO
• Format: Patent
• Language: English
• Published: 22.05.1998
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a method for forming an SiO2 insulating film according to plasma CVD, capable of achieving higher speed film deposition, higher film adhesion, and higher film hardness. SOLUTION: A magnetic field is applied in a plasma generating chamber 1 by a magnetic coil 2 arrang...