FORMATION OF SIO2 FILM BY PLASMA CVD

• Main Authors: TAMAMAKI HIROAKI, NOMURA MASAYA, SANO KEIICHIRO
• Format: Patent
• Language: English
• Published: 22.05.1998
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a method for forming an SiO2 insulating film according to plasma CVD, capable of achieving higher speed film deposition, higher film adhesion, and higher film hardness. SOLUTION: A magnetic field is applied in a plasma generating chamber 1 by a magnetic coil 2 arranged around the plasma generating chamber 1, a microwave of 100-200W is introduced into the plasma-generating chamber 1, an upstream-gas is introduced into the plasma-generating chamber for generating ECR plasma, a raw material is vaporized downstream to generate the gas to be supplied. This gas is supplied from the inlet, and further the ECR(electron cyclotron resonance) plasma is passed through a mesh provided between the inlet 6 and a substrate 7 or between the plasma-generating chamber 1 and the inlet, and the substrate is made not to be heated, thus an SiO2 film is deposited on the surface of the substrate. The substrate is heated to 150-300 deg.C, preferably to a temperature not lower than 150 deg.C and higher than 200 deg.C.