METHOD FOR FORMING CONTACT HOLE ON SEMICONDUCTOR DEVICE

• Main Author: SUGINO MASAMI
• Format: Patent
• Language: English
• Published: 06.05.1998
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To form minute contact holes, with no increased number of processes, in an insulation film simply and with good productivity, by forming contact holds through etching the insulation film, reforming the surface of a photo-resist to of hydrophilic property, and further etching the contact holes. SOLUTION: On 3-layer insulation films 12, 13, and 14 on a substrate 11, an etching pattern is formed with a photoresist. Then performing dry-etching, the insulation films 12-14 are etched along the etching pattern, for forming a contact hole 17. As an etching gas used for dry-etching process, CHF3 , CF4 , NF3 , SF6 , etc., are employed. Then, the surface photresist is reformed, further, to hydrophilic property. The reforming is, preferably, performed by using oxidized gas (O2 , NO2 , O3 , NO, etc.) in presence of dry-etching gas. Then, the contact hole 17 is further etched in wet-etching process.