SPUTTERING DEVICE AND TREATMENT OF DEPOSIT ON COLLIMATOR

• Main Author: ARIGA MICHIO
• Format: Patent
• Language: English
• Published: 28.04.1998
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a means for effectively preventing a deposit on the lower face of a collimator in a sputtering device from being stripped off. SOLUTION: This sputtering device is provided with a vacuum chamber, a pedestal 70 supporting a wafer, a target 60, means 54 and 55 for supplying a gas such as Ar, a collimator 62 arranged between the target 60 and pedestal 70 and a Ti shutter disk S capable of being arranged between the pedestal 70 and collimator 62 and maintained at a negative potential with respect to the collimator 62. Under such a constitution, when the gaseous Ar between the collimator 62 and shutter disk S is converted to plasma, a high-energy Ti particle is emitted from the shutter disk S and collided with the lower face of the collimator 62. Consequently, such a deposit as TiN film on the lower face of the collimator 62 is effectively sealed, and the deposit is not stripped off.