SEMICONDUCTOR DEVICE AND FORMING METHOD OF CONTACT HOLE

PROBLEM TO BE SOLVED: To enable all contact holes to be fully and pertinently etched nearly in the same etching time by a method wherein contact holes which vary in diameter corresponding to the thickness of an SiO2 film are provided in the SiO2 film. SOLUTION: An exposure mask 14 is arranged above...

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Bibliographic Details
Main Author KOMAI MASATSUGU
Format Patent
LanguageEnglish
Published 08.04.1997
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To enable all contact holes to be fully and pertinently etched nearly in the same etching time by a method wherein contact holes which vary in diameter corresponding to the thickness of an SiO2 film are provided in the SiO2 film. SOLUTION: An exposure mask 14 is arranged above a resist layer 13 and irradiated with light rays 14a for the formation of a resist pattern 13a. At this point, a large hole 13b is provided in a part of an SiO2 film 32 located at a diffusion layer 32a corresponding to a large thickness A, and a small hole 13c is provided in a part of the SiO2 film 32 located above a step corresponding to a small thickness B. The SiO2 film 32 is subjected to etching using the resist pattern 13a as a mask, and contact holes 15a and 15b are formed making the holes 13b and 13c provided after the formation of the resist pattern correspondent to holes 13b' and 13c' formed after etching respectievly.
Bibliography:Application Number: JP19950253453