SPUTTERING TARGET

• Main Authors: ISHIGAMI TAKASHI, SAKAI AKIRA, HIRAYAMA HIDEO, TAKADO TEIJI, HIDAKA KOJI
• Format: Patent
• Language: English
• Published: 11.03.1997
• Edition: 6
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To easily uniformize the erosion quantity of plural target materials having mutually different sputtering rates without causing the change in the shape of a cathode, the intrusion of impurity materials and the generation of dust regardless of DC sputtering and RF sputtering. SOLUTION: This sputtering target 4 has mosaically arranged plural target materials 1 and 2 and a backing plate 3 supporting these plural target materials 1 and 2. In the plural target materials 1 and 2, in the lower direction of the target material 1 high in the sputtering rate, a ferromagnetic material sheet 5 is arranged, by which the magnetic field intensity in the upper direction of the target material 1 high in the sputtering rate is reduced.