MULTI-WAVELENGTH LIGHT EMITTING DIODE
PROBLEM TO BE SOLVED: To provide a full color light emitting element constituted of an element formed on the same substrate. SOLUTION: A light emitting diode part 24 composed of GaP based compound semiconductor is laminated on the same substrate 1. Light emitting diode parts 25, 26 composed of GaN b...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
25.02.1997
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Edition | 6 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a full color light emitting element constituted of an element formed on the same substrate. SOLUTION: A light emitting diode part 24 composed of GaP based compound semiconductor is laminated on the same substrate 1. Light emitting diode parts 25, 26 composed of GaN based compound semiconductor are laminated on the light emitting diode part 24. A ZnO film 5 as an insulating layer is interposed between the light emitting diode part 24 and the light emitting diode part 25. |
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Bibliography: | Application Number: JP19950204522 |