FORMATION OF ANTI-REFLECTION FILM

• Main Author: OIMIZU TOSHIAKI
• Format: Patent
• Language: English
• Published: 10.01.1997
• Edition: 6
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; PHYSICS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE: To provide a forming method of an anti-reflection film free from absorption at a low temp., having the same film hardness as that of a conventional film formed by heating a substrate and made of a low refractive index fluoride. CONSTITUTION: The forming method of the anti-reflection film using MgF2 or AlF3 of the low refractive index fluoride as a material for vapor deposition includes a process for forming evaporated particles by evaporating MgF2 or AlF3 under resistance heating, a process for activating the evaporated particles by passing through plasma zone 12 formed between the evaporation source and the glass substrate 8 in an oxygen atmosphere and a process for film forming by recombining the activated evaporated particles on the glass substrate 8.