SURGE-PREVENTING DEVICE

• Main Authors: SHIMODA YOSHIO, SATO HIDETAKA
• Format: Patent
• Language: English
• Published: 14.02.1997
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To enable a surge-preventing device to be lessened in power loss induced by a resistor, decreased in heat release value, and enhanced in surge current withstand by a method wherein the resistor arranged between a diffusion emitter layer region and an electrode is composed of resistors of negative temperature coefficient. SOLUTION: N-type diffusion base layer regions 2 and 2' are formed on both sides of a semiconductor substrate 1, a P-type diffusion emitter layer region 3 is formed in the region 2, and a P-type diffusion emitter layer region 3' is formed in the region 2'. Resistors 10 and 10' of amorphous silicon with negative temperature coefficient are formed covering the diffusion emitter layer regions 3 and 3'. The diffusion emitter layer regions 3 and 3a' of each thyristor are connected to electrodes 7 and 7' through the intermediary of the resistors 10 and 10'. Therefore, all device of this constitution can be surely actuated in a short time, set internally uniform in temperature in a short time, lessened in temperature peak, and furthermore decreased in current loss caused by a resistor.