NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

PROBLEM TO BE SOLVED: To increase the UV ray transmittance to a floating gate electrode and improve erasing characteristics, by eliminating at least a part of an interlayer insulating film of a region positioned between parallel metal wirings. SOLUTION: An N<+> type drain region 9 and an N<...

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Bibliographic Details
Main Author IWASAKI MASATOSHI
Format Patent
LanguageEnglish
Published 07.02.1997
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:PROBLEM TO BE SOLVED: To increase the UV ray transmittance to a floating gate electrode and improve erasing characteristics, by eliminating at least a part of an interlayer insulating film of a region positioned between parallel metal wirings. SOLUTION: An N<+> type drain region 9 and an N<+> type source electrode 10 are formed on the surface of a P-type semiconductor substrate 1. A floating gate electrode 3 is formed via a first gate insulating film 2 formed on a channel region between the drain region 9 and the source electrode 10. A control electrode 5 is formed on the floating gate electrode 3 via a second gate insulating film 4. An interlayer insulating film 6 is deposited on the above structure. At least a part of the interlayer insulating film 6 positioned between parallel metal wirings 7 (digit lines) is eliminated. Thereby the UV ray transmittance to the floating gate 3 can be improved.
Bibliography:Application Number: JP19950207648