SEMICONDUCTOR MEMORY DEVICE WITH VARIABLE PLATE VOLTAGE GENERATION CIRCUIT

• Main Authors: JO TOICHI, RI SOUFU
• Format: Patent
• Language: English
• Published: 07.02.1997
• Edition: 6
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

PROBLEM TO BE SOLVED: To enhance the sensing rate at low voltage by boosting the voltage level at the storage node of a designated memory cell forcibly through a plate voltage generation circuit. SOLUTION: A plate voltage of VCC level is fed to the plate node of a memory cell through the channel of...