MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To stop polishing of an interlayer insulating film at a proper time without using a stopper and improve the flatness of the polished surface. SOLUTION: Before an interlayer insulating film 23 formed on a semiconductor substrate 22 is polished, ions of Ar, As or the like are imp...

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Bibliographic Details
Main Author MATSUNO TOMOYUKI
Format Patent
LanguageEnglish
Published 16.12.1997
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To stop polishing of an interlayer insulating film at a proper time without using a stopper and improve the flatness of the polished surface. SOLUTION: Before an interlayer insulating film 23 formed on a semiconductor substrate 22 is polished, ions of Ar, As or the like are implanted into the polishing object region of the interlayer insulating film 23. Then at least one of the semiconductor substrate 22 on which the interlayer insulating film 23 is formed and a polishing member for the semiconductor substrate 22 is driven to rotate and the surface of the interlayer insulating film 23 including the ion implanted region 25 is polished. During this polishing process, the revolution of the semiconductor substrate 22 or the polishing member driven to rotate is monitored and, if the revolution becomes lower than a predetermined revolution, the polishing process is stopped.
Bibliography:Application Number: JP19960141896