FORMING METHOD OF LOW SPECIFIC DIELECTRIC CONSTANT POLYMER FILM, FORMING METHOD OF INTERLAYER INSULATING FILM AND LOW SPECIFIC DIELECTRIC CONSTANT POLYMER FILM FORMING APPARATUS

PROBLEM TO BE SOLVED: To obtain a low specific dielectric constant film which has high heat- resistance and stable characteristics by a simple process. SOLUTION: Raw monomer which has substituents such as methyl-groups, methoxy-groups, t-butyl groups, etc., which have large staeric hindrance in side...

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Bibliographic Details
Main Authors SATO MASATOSHI, UKISHIMA YOSHIYUKI
Format Patent
LanguageEnglish
Published 16.12.1997
Edition6
Subjects
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Summary:PROBLEM TO BE SOLVED: To obtain a low specific dielectric constant film which has high heat- resistance and stable characteristics by a simple process. SOLUTION: Raw monomer which has substituents such as methyl-groups, methoxy-groups, t-butyl groups, etc., which have large staeric hindrance in side chains is used when the raw monomer is vaporized in a vacuum and deposited and polymerized on a substrate to form a polymer film or a polyimide film. After a deposited film is formed in a deposited polymerized film forming chamber 1, an ultraviolet radiation is applied to the deposited film in an ultraviolet radiation chamber 1 for cross-linking reaction or the deposited film is heated and polymerized in a heating chamber 3 without the ultraviolet radiation application. With this constitution, a low specific dielectric constant interlayer insulating film which has high-heat-resistance and does not show change with time can be obtained.
Bibliography:Application Number: JP19960165308