GAS INSULATED CAPACITOR

• Main Authors: KAWAI TOMOHIRO, NISHIDE HIDEKI, ISHIZUKA HIROSHI, WAKABAYASHI YUKO, HAYASHI HIROAKI
• Format: Patent
• Language: English
• Published: 16.12.1997
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE; ELECTRICITY

PROBLEM TO BE SOLVED: To prevent aluminum from being oxidized and hence avoid deterioration of capacitance drop by adding a specific amount of Si to the aluminum. SOLUTION: A capacitor is configured such that two sheets of a film A and a film B are superimposed an wound around a core 4. Any film is manufactured by continuously depositing an Al alloy on a polypropylene film 1 wound on a roll using a vacuum deposition apparatus. In the vacuum deposition apparatus an aluminum alloy containing 0.01% to 5.0% Si is continuously deposited on one surface of the polypropylene film 1 to form an aluminum deposited surface 2. A film having a non-deposited surface 3 downward is assumed to be the film A and a film having the non-deposited surface 3 upward to be the film B. Many sheets of these kinds of film are superimposed and laminated. After they are wound by a predetermined turns, metal is injected to form electrodes 5, 6. The upper injection electrode 5 makes contact with an upper end of the aluminum film of the film A. The lower injection electrode 6 makes contact with a lower end of the aluminum film of the film B.