SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

• Main Authors: MITANI YUICHIRO, KUNISHIMA IWAO, MIZUSHIMA ICHIRO, KANBAYASHI SHIGERU, KASHIWAGI MASAHIRO
• Format: Patent
• Language: English
• Published: 02.12.1997
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device in which a shallow low-resistant source-drain diffusion layer is formed. SOLUTION: An element separation insulating film 104 is formed projectingly from the surface of a silicon substrate 101, thereby forming an element region surrounded by the element separation insulating film 104. In the element region on the substrate 101, a gate part is formed so that its top face is almost on the same plane as the top face of the element separation insulating film 104. A pair of source-drain diffusion layers 110 facing each other via the gate part are formed on the surface of the substrate. After forming a nickel silicide film 111 on the whole surface, the nickel silicide film 111 is polished, thereby embedding the nickel silicide film 111 between the element separation insulating film 104 and the gate part.