BATCH ASHING SYSTEM

• Main Authors: YONEYAMA SHIMAO, KUDO DAIJIRO, FUKUOKA SEIYA, OOSAKAYA TAKAYOSHI, FUJITA TAICHI
• Format: Patent
• Language: English
• Published: 02.12.1997
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To enable efficient processing by stabilizing the impedance at an inner electrode to generate stable plasma discharge under any process conditions. SOLUTION: A wafer W is held at a predetermined supporting space inside a reaction tube 1. Etching and ashing are performed onto the surface of the wafer W via radical inlet holes 11 opened in an inner electrode 3 by application of a high-frequency voltage between inner and outer electrodes 2, 3, one of which is connected to a high-frequency power source and the other is grounded. An anticorrosive oxide film is formed in advance on the surface of the inner electrode 3 in the reaction tube 1 and on the surfaces of a bottom plate 4 and a top plate 5 supporting the inner electrode 3. This anticorrosive oxide film is made of either Al2 O3 or SiO2 . Alternatively, the bottom plate 4 and the top plate 5 themselves are made of an anticorrosive oxide material. The radical inlet holes 11 are distributed over the whole inner electrode 3, and the bare surface of the inner electrode 3 is substantially exposed at edge parts on edges of the radical inlet holes 11.