PRELIMINARY ADJUSTMENT PROCESS FOR PROCESSING ACCUMULATION CHAMBER BEFORE ACCUMULATING TUNGSTEN SILICIDE COATING ON ACTIVE SUBSTRATE
PROBLEM TO BE SOLVED: To provide a process for preliminarily adjusting the surface of a tungsten silicide accumulation chamber after cleaning step of a chamber performed in advance and besides before accumulating tungsten silicide on an active substrate within a chamber. SOLUTION: A preliminary adju...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
07.10.1997
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Edition | 6 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a process for preliminarily adjusting the surface of a tungsten silicide accumulation chamber after cleaning step of a chamber performed in advance and besides before accumulating tungsten silicide on an active substrate within a chamber. SOLUTION: A preliminary adjustment, operation to perform the process of forming a first deposit of tungsten silicide of silane base on the surface of a chamber is performed in the first place by as supply source of gas-form silicon such as silane, etc., or tungsten-containing gas such as WF6 , etc. Preferably, furthermore, as preliminary adjustment process, operation to process the already coated surface of a chamber by the mixture of tungsten-containing gas and chlorine-substituting silane, before tungsten is accumulated on an active substrate within an accumulation chamber, and form chlorine-substituting silane base tungsten silicide on tungsten silicide accumulated in advance is performed. |
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Bibliography: | Application Number: JP19960339986 |